1/6 preliminary data august 2001 STL35NF10 n-channel 100v - 0.025 w - 35a powerflat? low gate charge stripfet? mosfet n typical r ds (on) = 0.025 w n improved die-to-footprint ratio n very low profile package description this power mosfet is the second generation of stmicroelectronics unique stripfet? technolo- gy. the resulting transistor shows extremely low on- resistance and minimal gate charge. the new pow- erflat? package allows a significant reduction in board space without compromising performance. applications n high efficiency isolated dc/dc conveters absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STL35NF10 100 v < 0.030 w 35 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain-gate voltage (r gs = 20 k w ) 100 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c drain current (continuos) at t c = 100c 35 22 a a i dm ( l ) drain current (pulsed) 140 a p tot total dissipation at t c = 25c 80 w derating factor 0.64 w/c e as (1) single pulse avalanche energy 135 mj t stg storage temperature C65 to 150 c t j max. operating junction temperature C55 to 150 c (1) starting t j = 25 c, i d = 35a, v dd = 50v powerflat ?(6x5) (chip scale package) internal schematic diagram
STL35NF10 2/6 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.56 c/w rthj-amb thermal resistance junction-ambient max 50 c/w symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 2 2.8 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 17.5 a 0.025 0.030 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =20 v , i d = 15 a 18 s c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 1780 pf c oss output capacitance 265 pf c rss reverse transfer capacitance 162 pf
3/6 STL35NF10 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 17.5 a r g = 4.7 w v gs = 10v (see test circuit, figure 1) 28 ns t r rise time 63 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v, i d = 35 a, v gs = 10 v (see test circuit, figure 2) 60 10 23 80 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 50 v, i d = 17.5 a, r g =4.7 w, v gs = 10 v (see test circuit, figure 1) 84 28 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 35 a i sdm (1) source-drain current (pulsed) 140 a v sd (2) forward on voltage i sd = 18 a, v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 35 a, di/dt = 100a/s, v dd = 25 v, t j = 150c (see test circuit, figure 3) 114 456 8 ns nc a
STL35NF10 4/6 fig. 3: test circuit for diode recovery behaviour fig. 2: gate charge test circuit fig. 1: switching times test circuit for resistive load
5/6 STL35NF10 dim. mm. inch min. typ max. min. typ. max. a 0.80 1.00 0.031 0.039 a1 0.08 0.003 b 0.36 0.48 0.014 0.018 d 4.89 0.191 d2 3.95 4.05 0.154 0.158 e 6.00 0.235 e2 2.95 3.05 0.115 0.119 e 1.27 0.049 l 0.65 0.85 0.025 0.033 powerflat ? (6x5) mechanical data
STL35NF10 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
|
